MAGNETOELECTRIC EFFECTS AND NEW SPINTRONICS LOGIC DEVICES

Z. Gareeva, A. M. Trochina, SH.T. Gareev
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引用次数: 0

Abstract

The paper discusses new logic spintronic devices and the prospects for the use of perovskite-type multiferroics as working elements of magnetoelectric components. The principle of operation of the considered logical devices is based on the use of two components - a magnetoelectric, in which the magnetic state is recorded due to energy-efficient magnetoelectric interaction, and a spin-orbital component, in which information is read out based on the conversion of spin into charge due to the spin-orbital interaction of electrons; both components are interconnected by a nanoelectrode. When designing new logic spintronic devices, it is necessary to take into account the effectiveness of the mechanisms of ME interactions; features of spin - polarized currents and associated torques influencing magnetic moments; as well as other factors affecting the speed of switching magnetic states and the sensitivity of the device to external agents. Multiferroic materials that are promising for use as elements of ME components of new logic devices must meet a number of requirements, the most significant of which are the magnitude of the magnetoelectric coupling coefficient and the temperature at which ME effects occur. The paper considers representatives of multiferroics with a perovskite structure that meet these conditions, to some extent partially, these are high-temperature multiferroic bismuth ferrite (BiFeO3) and Ruddlesden-Popper structures, in which high-temperature ferroelectric effects are already realized and under certain conditions an ME effect is possible. The crystal structure of these compounds is considered, and the role of crystallographic distortions responsible for the manifestation of magnetoelectric properties is analyzed. Expressions are obtained for the tensor of the magnetoelectric effect as functions of magnetic order parameters, and the fundamental possibility of realizing ME effects in Ruddlesden-Popper structures containing magnetic cations is shown.
磁电效应与新型自旋电子学逻辑器件
本文讨论了新型逻辑自旋电子器件,并展望了钙钛矿型多铁质材料作为磁电元件工作元件的应用前景。所考虑的逻辑器件的工作原理基于两个组件的使用-磁电组件,其中由于节能的磁电相互作用而记录磁性状态,以及自旋轨道组件,其中由于电子的自旋轨道相互作用而将自旋转化为电荷,从而读出信息;这两个组件通过纳米电极相互连接。在设计新型逻辑自旋电子器件时,必须考虑ME相互作用机制的有效性;自旋极化电流及其相关转矩对磁矩的影响以及其他影响切换磁态速度和器件对外部介质灵敏度的因素。有希望用作新型逻辑器件ME元件元件的多铁性材料必须满足许多要求,其中最重要的是磁电耦合系数的大小和ME效应发生的温度。本文考虑的具有钙钛矿结构的多铁材料的代表,在一定程度上部分满足这些条件,这些代表是高温多铁铋铁氧体(BiFeO3)和Ruddlesden-Popper结构,它们已经实现了高温铁电效应,并且在一定条件下可能产生ME效应。考虑了这些化合物的晶体结构,并分析了晶体畸变在磁电性能表现中的作用。得到了磁电效应张量与磁序参数的函数表达式,表明了在含磁性阳离子的Ruddlesden-Popper结构中实现ME效应的基本可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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