Hybrid small-signal π-model for the lateral NQS effect in SiGe HBTs

Shon Yadav, A. Chakravorty, M. Schroter
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引用次数: 2

Abstract

The state-of-the-art and π-models for the lateral non-quasi-static (NQS) effect are analyzed. The superiority of the π-model to capture the lateral NQS effect is demonstrated through small-signal simulations of both the models, implemented in Verilog-A. A hybrid model is proposed and a corresponding formulation of the base impedance is obtained. The equation gives the base impedance of the state-of-the-art as well as the π-model under appropriate conditions. The methodology to implement the hybrid model in Verilog-A is discussed. The hybrid model shows significantly higher accuracy than both the state-of-the-art model and the π-model when compared with the device simulation data.
SiGe hbt横向NQS效应的混合小信号π-模型
分析了横向非准静态(NQS)效应的状态模型和π-模型。通过在Verilog-A中实现的两种模型的小信号仿真,证明了π-模型在捕获横向NQS效应方面的优越性。提出了一种混合模型,并得到了相应的基极阻抗表达式。方程给出了在适当条件下的基极阻抗和π-模型。讨论了在Verilog-A中实现混合模型的方法。通过与器件仿真数据的比较,表明混合模型的精度明显高于现有模型和π-模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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