Progress with 100 mm diameter In/sub 0.53/Ga/sub 0.47/As/InP wafer processing

Abstract

Photodetector array results for InGaAs/InP epitaxial layers grown on 50 and 75 mm diameter InP substrates are presented. Best shunt-resistance area products for lattice-matched material exceed 100,000 ohm-cm/sup 2/. X-ray topography results indicate that low defect density (<10,000 cm/sup -2/) iron-doped InP substrates are available in 100 mm diameter. Low dark current results were also obtained with a a "spin-on" zinc diffusion technique whereby the source of zinc is "spun-on" much like a photoresist.