Theoretical approach to the stoichiometric feature of field emission from Al/sub x/Ga/sub 1-x/N

Abstract

The field emission current density j from the ternary alloy Al/sub x/Ga/sub 1-x/N is calculated as a function of a stoichiometric composition x for 0/spl les/x/spl les/1. In addition to the doping, the internal field emission is considered to contribute to the carrier concentration n of the conduction band of Al/sub x/Ga/sub 1-x/N. A full calculation is made to obtain the exact j from Al/sub x/Ga/sub 1-x/N as a function of x and the field F. Then we found the stoichiometric dependence of field emission from Al/sub x/Ga/sub 1-x/N by analyzing the effects of both the electron affinity and the carrier concentration.