Research on Micro-area Sheet Resistance by Mapping Technique Method with Inclined Square Four Point Probe

Abstract

This article disserted the principle of the probe vacillated at testing a large silicon wafer with square four point probe equipment. The importance of the micro-area's sheet resistance is discussed and the principles of four point probe measurement technology are analyzed. Some factors that affect the measurement accuracy are studied, and interference can be avoided while measuring and analyzing the impact on square four point probe measurement by probe vacillate. The calculation formula of the square micro-area probe measurement is deduced when probes vacillated discretionarily. An experiment was made with a small wafer sample and accurate resistivity was gotten. The electrical resistivity is tested for another silicon wafer by a square four point probe equipment. Gray Mapping graphics was designed for displaying the micro area resistance.