A 2 Gb/s Throughput GaAs Digital Time Switch LSI Using LSCFL

Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI:10.1109/MCS.1985.1113649

T. Takada, Y. Shimazu, K. Yamasaki, M. Togashi, K. Hoshikawa, M. Idda

引用次数: 5

Abstract

A GaAs four channel digital time switch having a 2.0 Gb/s throughput is developed. Low Power Source Coupled FET Logic (LSCFL) and 0.55 µm gate length buried p-layer SAINT-FETs are applied. The switch includes 1176 devices (FETs, diodes, and resistors). The 75 % fabrication yield is attained using dislocation free wafers.

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采用LSCFL的2gb /s吞吐量GaAs数字时间开关LSI

研制了一种吞吐量为2.0 Gb/s的GaAs四通道数字时间开关。采用低功率源耦合场效应管逻辑(LSCFL)和0.55µm栅长埋p层saint -FET。该开关包括1176个器件(场效应管、二极管和电阻)。采用无位错晶圆可获得75%的成品率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Microwave and Millimeter-Wave Monolithic Circuits

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