A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances

Abstract

In this paper, a split-gate SiC trench MOSFET (SG-TMOS) with embedded unipolar diode for reverse conduction is proposed. By introducing the split-gate, an embedded MOS-channel diode is formed during the reverse conducting state, and helps to reduce the on-state voltage drop to 1.87 V, which is ~30% reduced compared with that of the conventional trench/planar MOSFET (C-TPMOS). Besides, the dynamic performances of the SG-TMOS are significantly improved. The CGD and CGS decrease by 80.3% and 35.2% compared with that of the C-TPMOS. As a result, the total switching loss (Etot) is reduced by 39.4% compared to that of the C-TPMOS.