A decade of FBAR success and what is needed for another successful decade

R. Ruby
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引用次数: 32

Abstract

July 31st, 2001, Avago (then Agilent) shipped its first 25,000 FBAR duplexers (in tape & reel) for nCDMA mobile phones. The value proposition was size (relative to the ceramic duplexers used at that time). At the time, it was supposed that FBAR technology using AlN as the active piezo material would not last beyond a few years. SAW technology, already entrenched in the lower frequencies and with better economies of scale and lower technology barrier to commercialization should have quickly made FBAR a ‘short-lived’ technology. Although still a possibility, FBAR has persevered for over 10 years due to several reasons; high Q, small size, ability to form an all-silicon package (utilizing silicon-fab technology) and reliability. However, the next 10 years pose a challenge to FBAR and serious innovation is necessary so that a similar talk about the success of FBAR covering 20 years can be given. Innovation must cover the ability to go differential, temperature compensation, continued Q enhancement, and chip-scale packages to spread the cost of manufacturing and research. This talk will touch on each of these subjects as well as giving an overview of the unique set of circumstances that made FBAR as successful as it is.
十年的FBAR成功,以及下一个成功的十年需要什么
2001年7月31日,Avago(当时的安捷伦)为nCDMA手机出货了首批25000个FBAR双工器(磁带和卷轴)。价值主张是尺寸(相对于当时使用的陶瓷双工器)。当时,人们认为使用AlN作为活性压电材料的FBAR技术不会持续超过几年。SAW技术已经扎根于较低的频率,具有更好的规模经济和较低的商业化技术障碍,应该很快使FBAR成为“短寿命”的技术。尽管仍有可能,但由于以下几个原因,FBAR已经坚持了10多年;高Q,小尺寸,能够形成全硅封装(利用硅晶圆厂技术)和可靠性。然而,未来10年对FBAR提出了挑战,有必要进行认真的创新,以便对FBAR 20年的成功进行类似的讨论。创新必须涵盖差分、温度补偿、持续Q增强和芯片级封装的能力,以分散制造和研究成本。这次演讲将涉及这些主题,并概述使FBAR取得成功的独特环境。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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