{"title":"Classification of Semiconductor Materials by Their Atomic Structure Order","authors":"A. Popov, I. Miroshnikova","doi":"10.1109/MWENT47943.2020.9067399","DOIUrl":null,"url":null,"abstract":"Development of solid-state electronics is inextricably linked with decreasing size of active regions of integrated circuits elements. This reduction in the size of active regions leads to possible violations of translational symmetry at their boundaries. This is why understanding the relationship between the sizes of ordered regions and the degree of ordering of their atomic structure and the properties of semiconductor material becomes urgent. This paper proposes a classification of semiconductor materials according to the size of ordered regions. It is noted that this parameter affects the band structure of the material, the degree of localization of charge carriers and, consequently, the electrophysical properties of the semiconductor. Moreover, a change in the degree of ordering of the atomic structure affects the effectiveness of methods for controlling material properties. Particular attention is paid to nano-ordered systems. The features of phase transitions from the initial crystalline, glassy, and amorphous states are analyzed.","PeriodicalId":122716,"journal":{"name":"2020 Moscow Workshop on Electronic and Networking Technologies (MWENT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Moscow Workshop on Electronic and Networking Technologies (MWENT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWENT47943.2020.9067399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Development of solid-state electronics is inextricably linked with decreasing size of active regions of integrated circuits elements. This reduction in the size of active regions leads to possible violations of translational symmetry at their boundaries. This is why understanding the relationship between the sizes of ordered regions and the degree of ordering of their atomic structure and the properties of semiconductor material becomes urgent. This paper proposes a classification of semiconductor materials according to the size of ordered regions. It is noted that this parameter affects the band structure of the material, the degree of localization of charge carriers and, consequently, the electrophysical properties of the semiconductor. Moreover, a change in the degree of ordering of the atomic structure affects the effectiveness of methods for controlling material properties. Particular attention is paid to nano-ordered systems. The features of phase transitions from the initial crystalline, glassy, and amorphous states are analyzed.