Sang-Min Yoo, Tae-Hwan Oh, J. Moon, Seunghoon Lee, U. Moon
{"title":"A 2.5 V 10 b 120 MSample/s CMOS pipelined ADC with high SFDR","authors":"Sang-Min Yoo, Tae-Hwan Oh, J. Moon, Seunghoon Lee, U. Moon","doi":"10.1109/CICC.2002.1012869","DOIUrl":null,"url":null,"abstract":"A 10 b multibit-per-stage pipelined ADC incorporating the merged-capacitor switching (MCS) technique achieves better than 53 dB SNDR at 120 MSample/s and 54 dB SNDR and 68 dB SFDR for input frequencies up to Nyquist at 100 MSample/s. The measured DNL and INL are /spl plusmn/0.40 LSB and /spl plusmn/0.48 LSB, respectively. The ADC fabricated in a 0.25 /spl mu/m CMOS process, occupies 3.6 mm/sup 2/ active die area and consumes 208 mW under a 2.5 V power supply.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2002.1012869","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 32
Abstract
A 10 b multibit-per-stage pipelined ADC incorporating the merged-capacitor switching (MCS) technique achieves better than 53 dB SNDR at 120 MSample/s and 54 dB SNDR and 68 dB SFDR for input frequencies up to Nyquist at 100 MSample/s. The measured DNL and INL are /spl plusmn/0.40 LSB and /spl plusmn/0.48 LSB, respectively. The ADC fabricated in a 0.25 /spl mu/m CMOS process, occupies 3.6 mm/sup 2/ active die area and consumes 208 mW under a 2.5 V power supply.