Polarity Dependency and 1/E Model of Gate Oxide TDDB Degradation in 3D NAND

Abstract

1/E model is found more appropriate for gate oxide time dependence dielectric breakdown (TDDB) lifetime prediction in CMOS with 6.7 nm SiO2 and poly electrode of 3D NAND technology, instead of widely used E model. It is believed that back-end-of-line process is the key factor contributing to the 1/E model, where hydrogen diffusion is originated from thick SiN and driven by final alloy. And anode hole injection (AHI) may be the dominant physic mechanism of this oxide degradation model. In addition, polarity dependency may be induced by decoupled plasma nitrogen (DPN) process and has no relation to 1/E model.