Millimeter-wave CMOS circuits for a high data rate wireless transceiver

Abstract

This paper presents millimeter-wave CMOS building blocks for a high date rate wireless transceiver. The results include measured data for a 40–50 GHz broad-band low noise amplifier, a 40 GHz tuned power amplifier, and an 18 GHz voltage controlled oscillator. Also, simulation results for a 22 GHz multi-modulus prescaler is presented for implementing phase locked loop. The circuits were fabricated 0.13 µ m CMOS process. The measured results showed good agreement with simulation data demonstrating good modeling accuracy of CMOS active and passive devices for millimeter-wave applications.