Jongwon Lee, Jooseok Lee, Jaehong Park, Kyounghoon Yang
{"title":"5 GHz low-power RTD-based amplifier MMIC with a high figure-of-merit of 24.5 dB/mW","authors":"Jongwon Lee, Jooseok Lee, Jaehong Park, Kyounghoon Yang","doi":"10.1109/ICIPRM.2013.6562608","DOIUrl":null,"url":null,"abstract":"A low dc power RTD microwave amplifier utilizing a hybrid-coupled reflection-type topology is presented. The low-power microwave amplifier, which consists of a quadrature hybrid coupler and two RTDs, is implemented using an InP-based MMIC technology. The fabricated RTD amplifier shows low dc power consumption of 470 W with high gain of 11.5 dB at 5 GHz, resulting in high FOM of 24.5 dB/mW. The amplifier IC is the first demonstration of a low-power microwave amplifier based on the RTD device technology.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562608","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A low dc power RTD microwave amplifier utilizing a hybrid-coupled reflection-type topology is presented. The low-power microwave amplifier, which consists of a quadrature hybrid coupler and two RTDs, is implemented using an InP-based MMIC technology. The fabricated RTD amplifier shows low dc power consumption of 470 W with high gain of 11.5 dB at 5 GHz, resulting in high FOM of 24.5 dB/mW. The amplifier IC is the first demonstration of a low-power microwave amplifier based on the RTD device technology.