SPICE Model of SiGe HBT with High Resistivity Substrate and its Amplifier Design

Abstract

The SPICE model parameters of SiGe HBT with high resistivity substrate is extracted. Compared results between measured and simulated data verify that this model is suitable for SiGe HBT DC and AC small-signal characterizations' representation. Using these extracted SPICE parameters, a two-stage direct-coupled amplifier has been designed and implemented on a Teflon substrate PCB. The simulated results are closed to that of test.