CMOS mixer linearization by the low-frequency signal injection method

C. Au-Yeung, K. Cheng
{"title":"CMOS mixer linearization by the low-frequency signal injection method","authors":"C. Au-Yeung, K. Cheng","doi":"10.1109/MWSYM.2003.1210891","DOIUrl":null,"url":null,"abstract":"This paper presents, for the first time, the application of low-frequency signal injection technique to the linearization of a doubly balanced dual gate mixer. The down-conversion mixer is fabricated using 0.35 /spl mu/m CMOS technology and is designed to operate at 900 MHz RF input frequency with good port-to-port isolation, low LO power and current consumption. Reduction of third-order intermodulation distortion (IMD) level of almost 20 dB is achieved by the proposed scheme.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1210891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22

Abstract

This paper presents, for the first time, the application of low-frequency signal injection technique to the linearization of a doubly balanced dual gate mixer. The down-conversion mixer is fabricated using 0.35 /spl mu/m CMOS technology and is designed to operate at 900 MHz RF input frequency with good port-to-port isolation, low LO power and current consumption. Reduction of third-order intermodulation distortion (IMD) level of almost 20 dB is achieved by the proposed scheme.
采用低频信号注入法实现CMOS混频器线性化
本文首次将低频信号注入技术应用于双平衡双门混频器的线性化。下变频混频器采用0.35 /spl mu/m CMOS技术制造,设计用于900 MHz RF输入频率,具有良好的端口对端口隔离,低LO功率和电流消耗。该方案可将三阶互调失真(IMD)降低近20 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信