{"title":"The effect of strong equalization in high-speed VCSEL-based optical communications up to 48 Gbit/s","authors":"Guido Belfiore, R. Henker, F. Ellinger","doi":"10.1109/BCTM.2016.7738957","DOIUrl":null,"url":null,"abstract":"In this paper the design of a VCSEL driver with strong equalization is presented. Unlike other published works the pre-emphasis provided from the proposed driver and the output voltage swing are independently tunable up to the saturation of the output stage (~700 mVpp in 50 Ω load environment). The driver is designed in 130 nm SiGe BiCMOS technology. Thanks to the various bandwidth extension techniques, the electrical data-rate at which the driver can operate is higher than 50 Gbit/s. A wide open optical eye diagram is measured at 48 Gbit/s with a 20 GHz VCSEL. The driver and the VCSEL consume only 188 mW from a dual voltage supply of 2.5 and 3.4 V. To the best of the authors knowledge 3.9 mW/(Gbit/s) is the highest reported energy-efficiency for a common-cathode VCSEL driver with data-rate higher than 40 Gbit/s. Moreover an open eye at 48 Gbit/s is the fastest reported for a common cathode VCSEL driver without pre-emphasis in the receiver.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2016.7738957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
In this paper the design of a VCSEL driver with strong equalization is presented. Unlike other published works the pre-emphasis provided from the proposed driver and the output voltage swing are independently tunable up to the saturation of the output stage (~700 mVpp in 50 Ω load environment). The driver is designed in 130 nm SiGe BiCMOS technology. Thanks to the various bandwidth extension techniques, the electrical data-rate at which the driver can operate is higher than 50 Gbit/s. A wide open optical eye diagram is measured at 48 Gbit/s with a 20 GHz VCSEL. The driver and the VCSEL consume only 188 mW from a dual voltage supply of 2.5 and 3.4 V. To the best of the authors knowledge 3.9 mW/(Gbit/s) is the highest reported energy-efficiency for a common-cathode VCSEL driver with data-rate higher than 40 Gbit/s. Moreover an open eye at 48 Gbit/s is the fastest reported for a common cathode VCSEL driver without pre-emphasis in the receiver.