Novel Concept of Microwave MEMS Reconfigurable 7X45° Multi-Stage Dielectric-Block Phase Shifter

N. Somjit, G. Stemme, J. Oberhammer
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引用次数: 10

Abstract

A novel concept of ultra-broadband multi-stage digital-type microwave MEMS phase shifters with the best performance optimized for W-band applications is introduced in this paper. The relative phase shift of 45° of a single stage is achieved by vertically moving a ¿2-long high-resistivity silicon dielectric block above a 3D micromachined coplanar waveguide (3D CPW) by electrostatic actuation, resulting in different propagation constants of the microwave signal for the up-state and the down-state. For full 360° phase-shift capability, seven stages are cascaded. The devices are fabricated and assembled by wafer-scale processes using bulk and surface micromachining. The measurement results of the first prototypes show that the W-band return and insertion loss of a single 45° stage is better than -15 dB and -1.7 dB, respectively, while the 7-stage phase shifter has a return loss better than -12 dB with an insertion loss less than -4 dB. The phase shifters also perform well from 1-110 GHz with the return loss better than -10 dB, an insertion loss of less than -1.5 dB and a fairly linear phase-shift over the whole frequency range and the actuation voltage is 30 V. To the knowledge of the authors this phase shifter is better than all previous works in term of insertion loss, return loss and phase shift per losses (°/dB) from 70-100 GHz.
微波MEMS可重构7X45°多级介电块移相器的新概念
本文提出了一种针对w波段应用优化的超宽带多级数字型微波MEMS移相器的新概念。通过静电驱动在三维微加工共面波导(3D CPW)上垂直移动2- 2长的高电阻硅介质块,使微波信号在上下状态的传播常数不同,从而实现了单级45°的相对相移。为了实现完整的360°相移能力,七个级联。这些器件是通过晶圆级工艺使用体和表面微加工制造和组装的。首批样机的测量结果表明,单45°级移相器的w波段回波损耗和插入损耗分别优于-15 dB和-1.7 dB,而7级移相器的回波损耗优于-12 dB,插入损耗小于-4 dB。移相器在1-110 GHz范围内也表现良好,回波损耗优于-10 dB,插入损耗小于-1.5 dB,在整个频率范围内具有相当线性的相移,驱动电压为30 V。据作者所知,在70-100 GHz范围内,该移相器在插入损耗、回波损耗和每损耗相移(°/dB)方面优于以往的所有工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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