{"title":"On-Wafer Frequency- and Time-Domain Characterization of InGaAs(P)/InP Heterojunction Bipolar Transistors and FETs","authors":"G. Mekonnen, H. Bach","doi":"10.1109/EUMA.1986.334298","DOIUrl":null,"url":null,"abstract":"A probe is designed to achieve frequency- and time-domain measurements on semiconductor devices, e.g. transistors direct on the wafer. Small signal frequency-domain information (s-parameters) were evaluated from pulse responses using Fourier transform algorithms to de-embed the device parameters from the surrounding transmission-line system and excitation pulse imperfections. A corrected time-domain response was obtained by the inverse Fourier transform of the device frequency response. Heterojunction bipolar transistors, fabricated in the InGaAsP/InP material system, were characterized with respect to their DC- and AC-properties.","PeriodicalId":227595,"journal":{"name":"1986 16th European Microwave Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 16th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1986.334298","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A probe is designed to achieve frequency- and time-domain measurements on semiconductor devices, e.g. transistors direct on the wafer. Small signal frequency-domain information (s-parameters) were evaluated from pulse responses using Fourier transform algorithms to de-embed the device parameters from the surrounding transmission-line system and excitation pulse imperfections. A corrected time-domain response was obtained by the inverse Fourier transform of the device frequency response. Heterojunction bipolar transistors, fabricated in the InGaAsP/InP material system, were characterized with respect to their DC- and AC-properties.