On-Wafer Frequency- and Time-Domain Characterization of InGaAs(P)/InP Heterojunction Bipolar Transistors and FETs

G. Mekonnen, H. Bach
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Abstract

A probe is designed to achieve frequency- and time-domain measurements on semiconductor devices, e.g. transistors direct on the wafer. Small signal frequency-domain information (s-parameters) were evaluated from pulse responses using Fourier transform algorithms to de-embed the device parameters from the surrounding transmission-line system and excitation pulse imperfections. A corrected time-domain response was obtained by the inverse Fourier transform of the device frequency response. Heterojunction bipolar transistors, fabricated in the InGaAsP/InP material system, were characterized with respect to their DC- and AC-properties.
InGaAs(P)/InP异质结双极晶体管和场效应管的片上频域和时域特性
探头的设计目的是实现半导体器件的频域和时域测量,例如直接在晶圆上的晶体管。利用傅里叶变换算法从脉冲响应中评估小信号频域信息(s参数),以从周围的输电在线系统和激励脉冲缺陷中去嵌入设备参数。通过对器件频率响应进行傅里叶反变换,得到了校正后的时域响应。在InGaAsP/InP材料体系中制备的异质结双极晶体管,对其直流和交流特性进行了表征。
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