SOI-based devices and technologies for High Voltage ICs

Abstract

This paper reviews the current status Silicon-On-Insulator (SOI) devices and technologies for high voltage integrated circuits (HVICs) and discusses new trends in the field. The paper focuses on novel SOI-based RESURF concepts such as superjunction, linearly graded profile or SOI membrane technology. Due to its intrinsic isolation properties, the SOI is the ideal substrate for bipolar MOS switches such as the LIGBT. In fact, the only LIGBT products on the market are fabricated using Dielectric Isolation (type of SOI) and SOI technology. The paper finishes with an overview of the fierce fight of technology survival in terms of specific Ron vs breakdown voltage. Here the SOI competes with quasi-vertical DMOS technologies and advanced bulk BCD technologies.