High-power waveguide integrated photodiode with distributed absorption

Abstract

A novel implementation of a vertically coupled, 1.3 /spl mu/m wavelength waveguide integrated InGaAs photodiode with distributed absorption is proposed using an index matching layer that can improve optical saturation power, responsivity and bandwidth. Waveguide photodiode made with this design shows a RF 1-dB compression point up to 10.2 mA at 20 GHz with CW optical power. Furthermore, the device has a 47 GHz 3-dB bandwidth, and 0.4 A/W microwave responsivity at 20 GHz without anti-reflection coating.