Gate oxide rupture localization by photon emission microscopy with the combination of Lock-in IR-OBIRCH

Abstract

There are many failure analysis cases are induced by the gate oxide rupture. It is a common and important failure mechanism in failure analysis. Photon emission microscopy with the combination of Lock-in IR-OBIRCH are very effective to localize the gate oxide rupture in MOS transistor, which can decrease analysis cycle time and improve success rates remarkably. In this paper, some different cases are presented to show how to locate the gate oxide rupture in MOS transistor accurately and quickly by photon emission microscopy with the combination of Lock-in IR-OBIRCH.