F. Blanchet, H. Bousbia, D. Barataud, J. Nebus, D. Pache
{"title":"The locus of points of constant output VSWR around the load optimal impedance: Evaluation of power transistors robustness","authors":"F. Blanchet, H. Bousbia, D. Barataud, J. Nebus, D. Pache","doi":"10.1109/ARFTG.2006.4734357","DOIUrl":null,"url":null,"abstract":"This paper determines the locus of points of constant output voltage standing wave ratio (VSWR) around the load optimal impedance at the fundamental frequency. This resolution is very helpful to determine the power transistors robustness. To illustrate this, some measurements results are presented on a Si/SiGe HBT of STMicroelectronics technology. The measurements are realized on two multi-harmonic load-pull test-benches: one passive and one active.","PeriodicalId":345451,"journal":{"name":"2006 67th ARFTG Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 67th ARFTG Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2006.4734357","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper determines the locus of points of constant output voltage standing wave ratio (VSWR) around the load optimal impedance at the fundamental frequency. This resolution is very helpful to determine the power transistors robustness. To illustrate this, some measurements results are presented on a Si/SiGe HBT of STMicroelectronics technology. The measurements are realized on two multi-harmonic load-pull test-benches: one passive and one active.