Advantage of CNTFET characteristics over MOSFET to reduce leakage power

Abstract

In this paper we compare and justify the advantage of CNTFET devices over MOSFET devices in nanometer regime. Thereafter we have analyzed the effect of chiral vector, and temperature on threshold voltage of CNTFET device. After simulation on HSPICE tool we observed that the high threshold voltage can be achieved at low chiral vector pair. It is also observed that the effect of temperature on threshold voltage of CNTFET is negligibly small. After analysis of channel length variation and their impact on threshold voltage of CNTFET as well as MOSFET devices, we found an anomalous result that the threshold voltage increases with decreasing channel length in CNTFET devices, this is quite contrary to the well known short channel effect. It is observed that at below 10 nm channel length the threshold voltage is increased rapidly in case of CNTFET device whereas in case of MOSFET device the threshold voltage decreases drastically below 10 nm channel length.