High power AlGaN/GaN heterojunction FETs for base station applications

Abstract

This work describes high power AlGaN/GaN heterojunction FETs on SiC substrates which we have developed. To our knowledge, Psat values of 203 W and 4 W are the highest ever achieved at 2 GHz and 30 GHz, respectively, for GaN FETs. We believe that GaN FET technology will play a dominant role in future base station systems.