Measurement techniques for coupling characterisation inside CMOS integrated circuits

J. Fourniols, E. Sicard, C. Garres
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引用次数: 1

Abstract

In this paper, techniques for crosstalk coupling modelling, simulation and measurement are proposed. A coupling model including capacitance and substrate effects is used for SPICE simulations for a given pair of inverters with varying size ratios and substrate resistivities. A technique is proposed for the measurement of the crosstalk noise based on RS latch sensors. An experimental implementation of the sensors in a 1.0 /spl mu/m CMOS technology is presented and the crosstalk measurements are compared to the simulation predictions. The results show high crosstalk noise close from the commutation point of the logic. Forecasts concerning submicron technologies are presented together with new sensor implementations.<>
CMOS集成电路内部耦合特性的测量技术
本文提出了串扰耦合的建模、仿真和测量技术。采用包含电容和衬底效应的耦合模型,对具有不同尺寸比和衬底电阻率的给定逆变器对进行SPICE仿真。提出了一种基于RS锁存传感器的串扰噪声测量方法。给出了传感器在1.0 /spl μ m CMOS技术下的实验实现,并将串扰测量结果与仿真预测结果进行了比较。结果表明,在逻辑换相点附近,串扰噪声较高。对亚微米技术的预测与新的传感器实现一起提出。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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