Increasing minimum operating voltage (VDDmin) with number of CMOS logic gates and experimental verification with up to 1Mega-stage ring oscillators

T. Niiyama, Piao Zhe, K. Ishida, M. Murakata, M. Takamiya, T. Sakurai
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引用次数: 24

Abstract

In order to explore the feasibility of the large scale subthreshold logic circuits and to clarify the lower limit of supply voltage (VDD) for logic circuits, the dependence of minimum operating voltage (VDDmin) of CMOS logic gates on the number of stages, gate types and gate width is systematically measured with 90-nm CMOS ring oscillators (RO's). The measured average VDDmin of inverter RO's increased from 90 mV to 343 mV when the number of RO stages increased from 11 to 1 Mega, which indicates the difficulty of the VDD scaling in the large scale subthreshold logic circuits. The dependence of VDDmin on the number of stages is calculated with the subthreshold current model with random threshold voltage (VTH) variations and compared with the measured results, which confirm the tendency of the measurement.
增加最低工作电压(VDDmin)与CMOS逻辑门的数量和实验验证高达1兆级环形振荡器
为了探索大规模亚阈值逻辑电路的可行性,明确逻辑电路的电源电压下限,利用90 nm CMOS环形振荡器系统地测量了CMOS逻辑门的最小工作电压(VDDmin)与级数、栅极类型和栅极宽度的关系。当反相级数从11兆增加到1兆时,逆变器反相级的平均VDDmin从90 mV增加到343 mV,这表明在大规模亚阈值逻辑电路中,反相级的缩放困难。利用随机阈值电压(VTH)变化的亚阈值电流模型计算了VDDmin对级数的依赖关系,并与实测结果进行了比较,证实了测量的趋势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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