A Wide-Band Complementary Digital Driver for Pulse Modulated Single-Ended and Differential S/C Bands Class-E PAs in 130 nm GaAs Technology

S. Rashid, B. Dupaix, P. Watson, Wagdy M. Gaber, V. Patel, A. Mattamana, S. Dooley, M. LaRue, W. Khalil
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引用次数: 4

Abstract

Wide-band digital drivers are indispensable for SMPAs (Switched Mode Power Amplifiers) in PWM (Pulse Width Modulation) and PPM (Pulse Position Modulation) applications. This paper presents the design of a wideband RF pre-amplifying buffer, innovated for very low dropout and low power complementary operation in heterojunction technologies affording only depletion type devices. A simple, passive bias level shifting technique is also incorporated to facilitate interfacing the digital modulator in silicon substrate with the PA in III-V wafer. In order to experimentally validate the concepts, the proposed driver is employed for driving an S-band single-ended class-E PA as well as for its differential version, modified to switch over S and C bands, in 130 nm GaAs pHEMT technology. The output powers of the differential amplifier are combined using on-chip transformer balun. Test results of both chips demonstrate that the implemented drivers consume less than 4% of the overall PA efficiencies, wherein the buffer responds linearly to the wideband input pulses when tested alone.
130 nm GaAs技术中脉冲调制单端和差分S/C波段e类PAs的宽带互补数字驱动器
在PWM(脉冲宽度调制)和PPM(脉冲位置调制)应用中,宽带数字驱动器是smpa(开关模式功率放大器)不可或缺的。本文介绍了一种宽带射频预放大缓冲器的设计,该缓冲器是为仅提供耗尽型器件的异质结技术中的极低差和低功率互补操作而创新的。采用一种简单的无源偏置电平移位技术,便于将硅衬底上的数字调制器与III-V晶圆上的PA相连接。为了在实验上验证这些概念,所提出的驱动器被用于驱动S波段单端e类PA及其差分版本,修改为在130 nm GaAs pHEMT技术中切换S和C波段。差动放大器的输出功率通过片上变压器平衡进行组合。两种芯片的测试结果表明,实现的驱动器消耗的总PA效率不到4%,其中缓冲器在单独测试时对宽带输入脉冲线性响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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