Complementary Resistive Switch Sensing

2018 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT) Pub Date : 2018-10-01 DOI:10.1109/DFT.2018.8602976

D. Pellegrini, M. Ottavi, E. Martinelli, C. Natale

引用次数: 2

Abstract

This document introduces a circuit model for sensing using memristive complementary resistive switch (CRS). Sensing using memristors has been recently introduced for its potential for high density integrations. The CRS element allows to reduce sneak currents as shown in previous literature. A combination of these two properties allows to obtain a very efficient sensing crossbar. Simulations to validate the quality of this new concept were performed at circuit level with SPICE, waiting for actual replies through prototypes testing.

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互补电阻开关传感

本文介绍了一种利用忆阻互补电阻开关(CRS)进行传感的电路模型。由于具有高密度集成的潜力，最近引入了使用忆阻器的传感技术。如先前文献所示，CRS元件允许减少潜流。这两种特性的结合可以获得非常有效的传感交叉杆。为了验证这个新概念的质量，在电路级用SPICE进行了模拟，等待原型测试的实际答复。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)

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