Effects of width of the quantum well on the shift in transition energy with operating current in InxGa1−xN/GaN quantum well diodes

S. Panda, P. Bera, D. Biswas
{"title":"Effects of width of the quantum well on the shift in transition energy with operating current in InxGa1−xN/GaN quantum well diodes","authors":"S. Panda, P. Bera, D. Biswas","doi":"10.1109/CODEC.2012.6509296","DOIUrl":null,"url":null,"abstract":"The influence of the well width and the operating current on the transition energies of InxGa1-xN/GaN quantum well (QW) diodes have been studied through the self consistent solution of the Schrödinger and Poisson equations. Large blue shift of the emission energy is observed due to the reduction in the well width. With increase in the current density the emission peak shifts toward higher energy. This shift, which is a major disadvantage of the lighting devices, is minimized by decreasing the width of the QW.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CODEC.2012.6509296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The influence of the well width and the operating current on the transition energies of InxGa1-xN/GaN quantum well (QW) diodes have been studied through the self consistent solution of the Schrödinger and Poisson equations. Large blue shift of the emission energy is observed due to the reduction in the well width. With increase in the current density the emission peak shifts toward higher energy. This shift, which is a major disadvantage of the lighting devices, is minimized by decreasing the width of the QW.
量子阱宽度对InxGa1−xN/GaN量子阱二极管跃迁能随工作电流变化的影响
通过Schrödinger方程和泊松方程的自相容解,研究了井宽和工作电流对InxGa1-xN/GaN量子阱(QW)二极管跃迁能的影响。由于阱宽的减小,发射能量发生了较大的蓝移。随着电流密度的增大,发射峰向高能量方向移动。这种位移是照明设备的主要缺点,通过减小量子阱的宽度来最小化。
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