T. Momose, T. Ohkubo, T. Uejima, T. Saito, M. Sugiyama, Y. Shimogaki
{"title":"Supercritical Fluid Deposition (SCFD) Technique as a Novel Tool for MEMS Fabrication","authors":"T. Momose, T. Ohkubo, T. Uejima, T. Saito, M. Sugiyama, Y. Shimogaki","doi":"10.1109/MEMSYS.2009.4805475","DOIUrl":null,"url":null,"abstract":"In the present paper, supercritical fluid deposition (SCFD) process is proposed for making functional films and coatings on the surface of MEMS devices. SCFD can provide superior step coverage on to high aspect ratio features at relatively low temperature. It also provides possibility to deposit wide variety of materials, including metals, oxides, and organic compounds, with controllability of substrate selectivity. For example, pure Cu was conformally dposited onto high aspect ratio vias for ULSI interconnects with 50nm in diameter and 1¿m in depth at 220 °C. The Cu-SCFD process is a selective process, which can deposit Cu film only on conductive surface, however, non-selective deposition of Cu is also possible by using CuMnOx as a buffer layer between Cu and insulative substrate. SiO2 film was conformally fabricated in high aspect ratio trenches with 500 nm in width and 5 ¿m in depth at 200 °C. Biocompatible poly ethylene glycol monomethacrylate (PEGMA) was grafted onto the surface of micro-channel with aspect ratio of 2500 at 80 °C, and proved effective protection of protein adsorption onto SiO2 surface.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"38 12","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2009.4805475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In the present paper, supercritical fluid deposition (SCFD) process is proposed for making functional films and coatings on the surface of MEMS devices. SCFD can provide superior step coverage on to high aspect ratio features at relatively low temperature. It also provides possibility to deposit wide variety of materials, including metals, oxides, and organic compounds, with controllability of substrate selectivity. For example, pure Cu was conformally dposited onto high aspect ratio vias for ULSI interconnects with 50nm in diameter and 1¿m in depth at 220 °C. The Cu-SCFD process is a selective process, which can deposit Cu film only on conductive surface, however, non-selective deposition of Cu is also possible by using CuMnOx as a buffer layer between Cu and insulative substrate. SiO2 film was conformally fabricated in high aspect ratio trenches with 500 nm in width and 5 ¿m in depth at 200 °C. Biocompatible poly ethylene glycol monomethacrylate (PEGMA) was grafted onto the surface of micro-channel with aspect ratio of 2500 at 80 °C, and proved effective protection of protein adsorption onto SiO2 surface.