Y. Kang, K.S. Jin, S. Kim, J. Lee, S.G. Kim, Y. Kim
{"title":"A high efficient dual path power amplifier for IS-95 CDMA handset applications","authors":"Y. Kang, K.S. Jin, S. Kim, J. Lee, S.G. Kim, Y. Kim","doi":"10.1109/SMIC.2004.1398187","DOIUrl":null,"url":null,"abstract":"A highly efficient dual path power amplifier (PA) for IS-95 code division multiple access (CDMA) handset applications is proposed. A dual path PA consists of two different size PAs combined parallely with single input/output matching circuits. The dual path PA operates in two different modes, a high power mode and a low power mode (lower than 16 dBm). A dual path PA is fabricated in an InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic micro-wave integrated circuit (MMIC) for the 1.76 GHz Korea Personal Communication Service (K-PCS), and operates at a supply voltage of 3.4 V. The dual path PA exhibits an output power of 29 dBm, a 46 % power added efficiency (PAE) at 28 dBm output power, and a -39 dBc adjacent channel power ratio (ACPR) at a 1.25 MHz offset frequency in the high power mode and an output power of 24 dBm, a 19 % PAE at a 16 dBm output power level, and a -58 dBc ACPR at a 1.25 MHz offset frequency in the low power mode.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A highly efficient dual path power amplifier (PA) for IS-95 code division multiple access (CDMA) handset applications is proposed. A dual path PA consists of two different size PAs combined parallely with single input/output matching circuits. The dual path PA operates in two different modes, a high power mode and a low power mode (lower than 16 dBm). A dual path PA is fabricated in an InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic micro-wave integrated circuit (MMIC) for the 1.76 GHz Korea Personal Communication Service (K-PCS), and operates at a supply voltage of 3.4 V. The dual path PA exhibits an output power of 29 dBm, a 46 % power added efficiency (PAE) at 28 dBm output power, and a -39 dBc adjacent channel power ratio (ACPR) at a 1.25 MHz offset frequency in the high power mode and an output power of 24 dBm, a 19 % PAE at a 16 dBm output power level, and a -58 dBc ACPR at a 1.25 MHz offset frequency in the low power mode.