Non-linear interaction of space charge waves in GaAs semiconductor

V. Grimalsky, J. Escobedo-Alatorre, M. Tecpoyotl-Torres, S. Koshevaya
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Abstract

This report deals with the non-linear effects on space charge waves (with phase velocity equal to the electron drift velocity) in GaAs semiconductors. If an external electric field is applied, at the critical field value E/sub crit/, the mobility changes its sign and becomes negative, as a result, there are obtained nonlinear and linear instabilities of the interactions at fields E/spl ges/E/sub crit/. Under these conditions, the electron velocity is a function of the electric field given by E=E/sub 0/+E/spl tilde/, where E/sub o/ is the constant part and E/spl tilde/ is the variable part. The simulation of the nonlinear interaction of space charge waves in the GaAs semiconductor is made considering both the Maxwell's equations and the velocity function.
GaAs半导体中空间电荷波的非线性相互作用
本文研究了砷化镓半导体中空间电荷波(相速度等于电子漂移速度)的非线性效应。如果外加电场,在临界场值E/sub crit/处,迁移率改变符号变为负值,从而得到E/spl ges/E/sub crit/处相互作用的非线性和线性不稳定性。在这些条件下,电子速度是E=E/sub 0/+E/spl tilde/给出的电场的函数,其中E/sub 0/为常数部分,E/spl tilde/为变量部分。考虑麦克斯韦方程组和速度函数,对砷化镓半导体中空间电荷波的非线性相互作用进行了模拟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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