55-µA GexTe1−x/Sb2Te3 superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures

Abstract

Ge_xTe_1-x/Sb₂Te₃ superlattice topological-switching random access memory (TRAM) was developed. Set and reset currents of 55 μA, the lowest for an ULSI-grade device, were obtained. TEM analyses of the Ge-Te structures and novel superlattice fabrication enabled us to reveal the retention, endurance, and electrical characteristics of TRAM for the first time.