Body doping analysis of vertical strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI:10.1109/RSM.2013.6706544

I. Saad, H. M. Zuhir, C. Bun Seng, D. Pogaku, A. R. A. Bakar, A. M. Khairul, B. Ghosh, N. Bolong, R. Ismail, U. Hashim

{"title":"Body doping analysis of vertical strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)","authors":"I. Saad, H. M. Zuhir, C. Bun Seng, D. Pogaku, A. R. A. Bakar, A. M. Khairul, B. Ghosh, N. Bolong, R. Ismail, U. Hashim","doi":"10.1109/RSM.2013.6706544","DOIUrl":null,"url":null,"abstract":"The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. There are significant drop in subthreshold slope (S) while threshold voltage is increase as the body doping concentration increases. It is notable that for body doping concentration above 1020, the S values keep increasing which is not recommended as the switching speed getting higher distracting performance of the device. An improved stability of threshold voltage, VTH was found for VESIMOS-DP device of various DP size ranging from 20nm to 80nm. The stability is due to the reducing charge sharing effects between source and drain region. In addition, the output characteristic was also highlighted a very good drain current at different gate voltage with the increasing of drain voltage for VESIMOS-DP with high body doping concentration. VESIMOS-DP with low body doping concentration suffers PBT effect that prevents the device from being able to switch off. Hence, high body doping concentrations are imperative for obtaining better device characteristics and ensure the device works in II mode.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2013.6706544","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

Abstract

The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. There are significant drop in subthreshold slope (S) while threshold voltage is increase as the body doping concentration increases. It is notable that for body doping concentration above 1020, the S values keep increasing which is not recommended as the switching speed getting higher distracting performance of the device. An improved stability of threshold voltage, VTH was found for VESIMOS-DP device of various DP size ranging from 20nm to 80nm. The stability is due to the reducing charge sharing effects between source and drain region. In addition, the output characteristic was also highlighted a very good drain current at different gate voltage with the increasing of drain voltage for VESIMOS-DP with high body doping concentration. VESIMOS-DP with low body doping concentration suffers PBT effect that prevents the device from being able to switch off. Hence, high body doping concentrations are imperative for obtaining better device characteristics and ensure the device works in II mode.

查看原文本刊更多论文

含介电袋的垂直应变- sige冲击电离MOSFET (VESIMOS-DP)体掺杂分析

本文成功研制了具有介电袋的垂直应变硅锗冲击电离MOSFET (VESIMOS-DP)。随着体掺杂浓度的增加，阈下斜率S显著下降，阈值电压显著升高。值得注意的是，当体掺杂浓度大于1020时，S值持续增加，不建议切换速度越快，器件的分散性能越高。对于20nm ~ 80nm不同尺寸的VESIMOS-DP器件，其阈值电压VTH具有较好的稳定性。这种稳定性是由于源极和漏极之间电荷分担效应的减少。此外，高体掺杂浓度VESIMOS-DP的输出特性也突出，在不同栅压下，随着漏极电压的增大，输出电流都很好。低体掺杂浓度的VESIMOS-DP会受到PBT效应的影响，使器件无法关闭。因此，为了获得更好的器件特性并确保器件在II模式下工作，高体掺杂浓度是必不可少的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics

自引率

0.00%

发文量