Low-Temperature Chemical Vapor Deposition of SiCN for Hybrid Bonding

2022 International Conference on Electronics Packaging (ICEP) Pub Date : 2022-05-11 DOI:10.23919/ICEP55381.2022.9795550

K. Onishi, T. Iwata, Hitoshi Habuka, F. Nagano, F. Inoue

引用次数: 1

Abstract

Low-temperature deposited PE-CVD SiCN has been comprehensively investigated towards the dielectric layer of Die-to-Wafer hybrid bonding. The PECVD SiCN was deposited at room temperature. The characterization of the deposited film and the impact of the plasma activation on the surface has been analyzed.

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用于杂化键合的SiCN低温化学气相沉积

对低温沉积PE-CVD SiCN在晶圆杂化键合中的介电层进行了全面的研究。在室温下沉积PECVD SiCN。分析了沉积膜的特性和等离子体活化对表面的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2022 International Conference on Electronics Packaging (ICEP)

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