Optimizing InP HBT technology for 50 GHz clock-rate MSI circuits

M. Sokolich, C. Fields, G. Raghavan, D. Hitko, M. Lui, D.P. Docter, Y. Brown, M. Case, A. Kramer, J.A. Henige, J. Jensen
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引用次数: 8

Abstract

Using experimental data and a sum of weighted RC time constant model we optimized AlInAs/GaInAs SHBT devices for minimum gate delay in a static divider. The best result obtained, a 55 GHz maximum clock rate, is to our knowledge the highest toggle rate reported to date. Comparable structures without critical base resistance optimization toggled at no more than 44 GHz. f/sub t/ and f/sub max/ were observed to be only weak indicators of divider performance. The calculated maximum toggle rates obtained from the weighted RC time constant method agree reasonably well with experiment. The experiments and analysis lead to the conclusion that the dominant parasitic component in this regime of ultra-high speed HBT is the base resistance.
50ghz时钟速率微si电路的InP HBT技术优化
利用实验数据和加权RC时间常数总和模型,对静态分压器中栅极延迟最小的AlInAs/GaInAs SHBT器件进行了优化。获得的最佳结果是55 GHz的最大时钟速率,据我们所知,这是迄今为止报道的最高切换速率。没有临界基极电阻优化的可比结构切换频率不超过44 GHz。F /下标t/和F /下标max/仅是分频器性能的弱指标。用加权RC时间常数法计算得到的最大切换率与试验结果吻合较好。实验和分析表明,在这种超高速HBT体制下,主要寄生成分是基极电阻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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