Front and back gate interface-trap generation due to hot carrier stress in fully depleted SOI/MOSFETs

Yujun Li, T. Ma
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Abstract

The analysis of hot-carrier induced degradation of SOI/MOSFETs is a complicated problem due to the dual channel and front-back coupling effect. Opinions vary as to whether hot-carrier stress of the front (or back) channel results in damage of the opposite channel. Most of the previous studies have used channel current or transconductance as the monitor of hot-carrier induced degradation in SOI/MOSFETs, which often does not allow clear separation between interface-trap generation and charge trapping at both interfaces. In this paper, by systematically examining the charge-pumping currents, junction recombination currents, static I/sub d/-V/sub g/ characteristics, and transconductance curves, we will demonstrate that the opposite channel is indeed damaged during channel hot-carrier (HC) stress, and this damage can be separated from the front-back coupling effect.
完全耗尽SOI/ mosfet中由于热载流子应力而产生的前后栅极界面陷阱
由于SOI/ mosfet的双通道和前后耦合效应,热载流子诱导降解的分析是一个复杂的问题。对于前(或后)通道的热载流子应力是否会导致相反通道的损坏,意见不一。先前的大多数研究都使用通道电流或跨导作为SOI/ mosfet中热载子诱导降解的监视器,这通常不能明确区分界面陷阱的产生和两个界面上的电荷陷阱。在本文中,通过系统地检测电荷泵送电流、结复合电流、静态I/sub d/-V/sub g/特性和跨导曲线,我们将证明,在通道热载流子(HC)应力期间,相反的通道确实受到了破坏,并且这种破坏可以与前后耦合效应分离。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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