CVD SiN/sub X/ anti-reflective coating for sub-0.5 /spl mu/m lithography

1995 Symposium on VLSI Technology. Digest of Technical Papers Pub Date : 1995-06-06 DOI:10.1109/VLSIT.1995.520864

T. Ong, B. Roman, W. Paulson, J. Lin, C. King, J. Hayden, Y. Ku, C. Fu, M. Luo, C. Philbin, M. Rossow, T. Mele, K. Kemp

引用次数: 1

Abstract

This paper reports the investigation of low pressure chemical vapor deposition of SiN/sub X/ film for bottom antireflective coating (BARC) application in 0.35 /spl mu/m lithography and below. The SiN/sub X/ material was successfully designed to provide excellent anti-reflective layer which meets various advanced device integration requirements. This BARC process has been found to be manufacturable for deep-UV and I-line lithography.

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用于0.5 /spl μ m以下光刻的CVD SiN/sub X/抗反射涂层

本文报道了用于0.35 /spl mu/m光刻及以下的底部减反射涂层(BARC)的低压化学气相沉积SiN/sub X/薄膜的研究。成功设计了SiN/sub X/材料，提供了优异的抗反射层，满足各种先进器件集成要求。这种BARC工艺已被发现可用于深紫外和i线光刻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1995 Symposium on VLSI Technology. Digest of Technical Papers

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