The application of ALD WN/sub x/C/sub y/ as a copper diffusion barrier

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Pub Date : 2003-06-02 DOI:10.1109/IITC.2003.1219734

S. Smith, G. Book, W. Li, Y. Sun, P. Gillespie, M. Tuominen, K. Pfeifer

引用次数: 2

Abstract

A 2.7 nm ALD WN/sub x/C/sub y/ copper barrier was integrated into fully functional backend dual-damascene devices built in SiO/sub 2/ on 200-mm wafers at International Sematech. Electromigration results were extraordinary, with average time to failure more than 10 times longer than standard PVD Ta. Electrical and physical results suggest that ultrathin WN/sub x/C/sub Y/ is an excellent copper barrier and meets the requirements for integration, including: Via resistance, electromigration, barrier integrity, film continuity, etc.

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ALD WN/sub x/C/sub y/作为铜扩散屏障的应用

一个2.7 nm的ALD WN/sub x/C/sub y/ copper barrier被集成到International Sematech的200毫米硅片上SiO/sub 2/构建的全功能后端双damascend器件中。电迁移结果非常出色，平均失效时间比标准PVD Ta长10倍以上。电学和物理结果表明，超薄的WN/sub x/C/sub Y/是一种优异的铜屏障，满足集成要求，包括:通孔电阻、电迁移、屏障完整性、薄膜连续性等。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)

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