Experimental study of electrical breakdown in MEMS devices with micrometer scale gaps

SPIE MOEMS-MEMS Pub Date : 2008-02-07 DOI:10.1117/12.763195
P. Carazzetti, Philippe Renaud, Herbert Shea
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引用次数: 22

Abstract

We present an experimental study of the DC breakdown voltage of MEMS interdigitated aluminum electrodes with gaps ranging from 10 to 500 μm. Unlike most research on MEMS electrodes, that was done at atmospheric pressure, our work has focused on the effect of gas pressure and gas type on the breakdown voltage. A main goal was to identify geometries that favor the creation of low-voltage discharges. Helium, argon and nitrogen pressure was varied from 102 to 8.104 Pa (1 to 800 mbar). The breakdown voltage was plotted as a function of the Paschen reduced variable Pred = p·g. For higher values of pressure, p or gap, d (high Pred), classical Paschen scaling was observed. For lower values of Pred however, significant deviations were seen, particularly at low pressures. We attribute these differences not to field emission, but to the scale of the mean free path (which explains the higher than predicted voltages), and to the many length scales effectively present in our planar geometry (on-chip and even off-chip, that lead to the superposition of several Paschen curves). Guidelines are proposed for low-pressure operation of MEMS to avoid or to encourage breakdown.
微米级间隙MEMS器件的电击穿实验研究
本文对间隙为10 ~ 500 μm的MEMS交错铝电极的直流击穿电压进行了实验研究。与大多数在大气压下进行的MEMS电极研究不同,我们的工作重点是气体压力和气体类型对击穿电压的影响。主要目标是确定有利于低压放电产生的几何形状。氦气、氩气和氮气压力在102 ~ 8.104 Pa (1 ~ 800 mbar)之间变化。击穿电压被绘制为Paschen约简变量Pred = p·g的函数。对于较高的压力p或间隙d(高Pred)值,观察到经典的Paschen缩放。然而,对于较低的Pred值,可以看到明显的偏差,特别是在低压下。我们将这些差异不是归因于场发射,而是归因于平均自由程的尺度(这解释了高于预测的电压),以及我们的平面几何结构中有效存在的许多长度尺度(片上甚至片外,这导致了几个Paschen曲线的叠加)。提出了MEMS低压操作的指导方针,以避免或鼓励击穿。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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