An Innovative Strategy to Reduce Die Area of Robust OTA by using iMTGSPICE and Diamond Layout Style for MOSFETs

José Roberto Banin Júnior, R. A. L. Moreto, Gabriel Augusto da Silva, C. Thomaz, S. Gimenez
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引用次数: 5

Abstract

This paper describes a pioneering design and optimization methodology that provides a remarkable die area reduction of robust analog Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuits (ICs) by using a computational tool based on artificial intelligence (iMTGSPICE) and the Diamond layout style for MOSFETs. The validation of this innovative optimization strategy for analog CMOS ICs was made for an Operational Transconductance Amplifiers (OTA) by using 180 nm CMOS ICs technology. The main finding of this work reports a remarkable reduction of the total die area of a robust OTA around 30%, regarding the use of Diamond MOSFETs with alfa angles of 45° when compared to the one implemented with standard rectangular MOSFETs.
利用iMTGSPICE和菱形布局减小mosfet鲁棒OTA模具面积的创新策略
本文描述了一种开创性的设计和优化方法,该方法通过使用基于人工智能(iMTGSPICE)的计算工具和mosfet的菱形布局风格,显著减少了鲁棒模拟互补金属氧化物半导体(CMOS)集成电路(ic)的模具面积。采用180纳米CMOS芯片技术,对模拟CMOS芯片的创新优化策略进行了验证。这项工作的主要发现报告了与使用标准矩形mosfet相比,使用α角为45°的金刚石mosfet相比,稳健OTA的总模具面积显着减少了约30%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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