The Nonlinear Bipolar and Unipolar Switching Behavior of a Memristor

S. Ghedira, Khaoula Mbarek, Faten Ouaja Rziga, K. Besbes
{"title":"The Nonlinear Bipolar and Unipolar Switching Behavior of a Memristor","authors":"S. Ghedira, Khaoula Mbarek, Faten Ouaja Rziga, K. Besbes","doi":"10.1109/DTSS.2019.8915346","DOIUrl":null,"url":null,"abstract":"The existence of the memristor as a nanoscale fundamental component is an interesting development in electronic systems. This is due to its remarkable nonlinear characteristics and its ability to examine large-scale amounts of storing data and to implement bio-inspired neuromorphic systems used in analyzing data. Research on memristor modeling based on SPICE tools, that are commonly used in electronic systems simulations, has grown rapidly. The aim of this paper is to simulate different types of memristor switching behavior. A simple memristor SPICE model is used to explore four types of memristor. This includes bipolar switching behavior, unipolar switching behavior, bipolar switching behavior with forgetting effect and a reversible process between bipolar and unipolar switching behavior of a memristor. In order to validate this study, the simulation results were compared against experimental data. This comparison showed a good agreement between the simulation results and the experimental results, compared with various memristor models. The SPICE macromodel used in our simulations shows a special advantage for its flexibility and simplicity.","PeriodicalId":342516,"journal":{"name":"2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTSS.2019.8915346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The existence of the memristor as a nanoscale fundamental component is an interesting development in electronic systems. This is due to its remarkable nonlinear characteristics and its ability to examine large-scale amounts of storing data and to implement bio-inspired neuromorphic systems used in analyzing data. Research on memristor modeling based on SPICE tools, that are commonly used in electronic systems simulations, has grown rapidly. The aim of this paper is to simulate different types of memristor switching behavior. A simple memristor SPICE model is used to explore four types of memristor. This includes bipolar switching behavior, unipolar switching behavior, bipolar switching behavior with forgetting effect and a reversible process between bipolar and unipolar switching behavior of a memristor. In order to validate this study, the simulation results were compared against experimental data. This comparison showed a good agreement between the simulation results and the experimental results, compared with various memristor models. The SPICE macromodel used in our simulations shows a special advantage for its flexibility and simplicity.
忆阻器的非线性双极和单极开关行为
忆阻器作为纳米级基本元件的存在是电子系统中一个有趣的发展。这是由于其显著的非线性特性和检查大量存储数据的能力,以及在分析数据时实施生物启发的神经形态系统的能力。基于SPICE工具的忆阻器建模研究在电子系统仿真中得到了迅速发展。本文的目的是模拟不同类型的忆阻器的开关行为。使用一个简单的忆阻器SPICE模型来研究四种类型的忆阻器。这包括双极开关行为、单极开关行为、遗忘效应双极开关行为以及忆阻器双极和单极开关行为之间的可逆过程。为了验证这一研究,将仿真结果与实验数据进行了比较。通过与各种忆阻器模型的比较,表明仿真结果与实验结果吻合较好。在我们的仿真中使用的SPICE宏模型显示出其灵活性和简单性的特殊优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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