{"title":"Two-dimensional integrated circuit process modeling program - RECIPE","authors":"G. E. Smith, A. Steckl","doi":"10.1109/IEDM.1980.189800","DOIUrl":null,"url":null,"abstract":"RECIPE is a two-dimensional (2-D) process modeling program developed for use in VLSI applications. The program incorporates a 2-D diffusion model which includes the concentration dependence of the diffusion coefficients. An incremental solution method is used to compute the appropriate diffusion coefficients as a function of time and distance. RECIPE has been used to model impurity profiles in short-channel MOSFET's with either P or As source and drain implants. For typical P and As implant conditions of 150 keV,1 \\times 10^{16}/cm2and 30 min. anneal at 1000°C, 1µm gate MOSFET's resulted in effective channel lengths of 0.2 and 0.5 µm, respectively.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
RECIPE is a two-dimensional (2-D) process modeling program developed for use in VLSI applications. The program incorporates a 2-D diffusion model which includes the concentration dependence of the diffusion coefficients. An incremental solution method is used to compute the appropriate diffusion coefficients as a function of time and distance. RECIPE has been used to model impurity profiles in short-channel MOSFET's with either P or As source and drain implants. For typical P and As implant conditions of 150 keV,1 \times 10^{16}/cm2and 30 min. anneal at 1000°C, 1µm gate MOSFET's resulted in effective channel lengths of 0.2 and 0.5 µm, respectively.