Investigation on Synaptic Characteristics of Interfacial Phase Change Memory for Artificial Synapse Application

Abstract

In this paper, an interfacial phase change memory (iPCM) based on superlattice (SL) structure was fabricated by stacking GeTe/Sb2Te3 alternatively, and synaptic characteristics such as linearity and symmetry of long-term potentiation (LTP)/long-term depression (LTD) were measured by Keithley 4200A-CSC parameter analyzer. The conventional phase change memory (PCM) based on Ge-Sb-Te alloy with the identical bottom electrode contact size was also fabricated for comparison.