A 230 W, 1.8 to 2.2 GHz broadband LDMOS power amplifier utilizing multi-section integrated passive device input matching

Abstract

This novel design technique was developed for the input pre-match circuit of discrete base station power amplifiers utilizing multi-section low pass, band pass and high pass topologies by carefully selecting the pole locations to achieve state of the art performance for broadband operation over 20% fractional bandwidth. The techniques have been applied to a 28 V, 230 W LDMOS PA to cover the RF bandwidth from 1.8 GHz to 2.2 GHz with equivalent RF performance for power, gain and efficiency as the narrowband designs while maintaining user-friendly input and load impedances as well as minimal linear phase distortion. To our knowledge, this is the first 28 V LDMOS high power amplifier capable of covering the 20% fractional bandwidth at 2 GHz reported to date.