Free BDD based CAD of Compact Memristor Crossbars for in-Memory Computing

Amad Ul Hassen, S. Khokhar, Haseeb Aslam Butt, Sumit Kumar Jha
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引用次数: 7

Abstract

The demise of Moore’s law, breakdown of Dennard Scaling, dark silicon phenomenon, process variation, leakage currents and quantum tunneling are some of the hurdles faced in the further advancement of computing systems today. As a result, there is a renewed interest in alternate computing paradigms using emerging nanoelectronic devices. This work uses free binary decision diagrams (FBDDs) for computer-aided design (CAD) of compact memristive crossbars for sneak-path based in-memory computing. The absence of a fixed variable ordering makes FBDDs more compact than their ordered counterpart called reduced ordered binary decision diagrams (ROBDDs). Our design has used the size of the circuit-representation of Boolean functions for selecting different variable orderings along different paths which results in compact FBDDs. We have demonstrated our approach by designing compact crossbars for a four-bit multiplier and other RevLib benchmarks. Our synthesis process yields a 50.1% reduction in area over the previous FBDD-based synthesis for the fourth-output-bit of the multiplier. Overall, our approach has reduced the multiplier area by 20.1%.
基于BDD的内存计算紧凑型忆阻器横条CAD
摩尔定律的消亡、登纳德尺度的崩溃、暗硅现象、工艺变化、泄漏电流和量子隧道是当今计算系统进一步发展所面临的一些障碍。因此,人们对使用新兴纳米电子器件的替代计算范式重新产生了兴趣。这项工作使用自由二进制决策图(fbdd)进行计算机辅助设计(CAD),用于基于内存计算的隐路径的紧凑记忆交叉杆。固定变量排序的缺失使得fbdd比它们的有序对应(称为简化有序二进制决策图(robdd))更加紧凑。我们的设计使用布尔函数的电路表示的大小来选择沿着不同路径的不同变量排序,从而产生紧凑的fbdd。我们通过为4位乘法器和其他RevLib基准设计紧凑的交叉条来演示我们的方法。与之前基于fbdd的合成相比,我们的合成工艺使乘法器的第四个输出位的面积减少了50.1%。总的来说,我们的方法使乘数面积减少了20.1%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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