Data regeneration and disturb immunity of T-RAM cells

Abstract

This work presents the first in-depth investigation of data regeneration and disturb immunity of T-RAM cells. Experimental results on deca-nanometer devices reveal that read operations do not compromise cell memory state, contributing, however, to its regeneration only when repeated at high frequency. The separate role of the word-line and the bit-line bias during read is then studied in detail, presenting a clear picture of the physical processes taking place in the device. In so doing, the impact of electrical disturbs on unselected cells coming from read operations in the array are comprehensively addressed.