Beyond refractive optical lithography next generation lithography "What's after 193 nm?"

P. Seidel, J. Canning, S. Mackay
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引用次数: 1

Abstract

The integrated circuit industry growth will continue to rely on microlithography as a key enabler to drive chip productivity. Current optical lithography methods (i.e. 193 nm) have been projected to have resolving power down to 130 nm CD generation nodes. Beyond this capability there is a strong consensus that a "Next Generation Lithography" (NGL) technology will be needed to continue along SIA Roadmap timelines. Many NGL technologies are candidates for sub-130 nm CD manufacturing. Choosing the technology path with partial data and limited resources by YE 1997 to meet 130 nm/2003 and 100 nm/2007 generation nodes will require a consensus (international) decision process methodology.
超越折光光刻下一代光刻“193nm之后是什么?”
集成电路行业的增长将继续依赖微光刻技术作为驱动芯片生产力的关键推动者。目前的光学光刻方法(即193nm)的分辨率预计将降至130nm的CD生成节点。除了这种能力之外,还有一个强烈的共识,即“下一代光刻”(NGL)技术将需要按照SIA路线图的时间表继续发展。许多NGL技术都是130纳米以下CD制造的候选技术。在1997年工业生产年度之前,选择具有部分数据和有限资源的技术路径,以满足130纳米/2003和100纳米/2007代节点,将需要一个共识(国际)决策过程方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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