Comparative Analysis of InGaAs/GaAs Quantum Dots Produced by Various Epitaxial Techniques

2022 International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2022-10-20 DOI:10.1109/EExPolytech56308.2022.9951000

A. Babichev, S. D. Komarov, Julia S. Tkach, Natalia V. Кryzhanovskaya, A. Nadtochiy, A. Blokhin, S. A. Blokhin, V. Nevedomskiy, N. Maleev, A. Gladyshev, L. Karachinsky, I. Novikov

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Abstract

We present the results on the formation and micro-photoluminescence studies of In0.63Ga0.37As/GaAs quantum dots grown by metal-organic vapour-phase epitaxy and molecular-beam epitaxy by Stranski-Krastanow growth mode. The structure with single layer of quantum dots grown by the metal-organic vapour-phase epitaxy demonstrated a higher peak/integral photoluminescence intensity, as well as a smaller half-width of the photoluminescence spectrum from quantum dots in comparison with the structure with single layer of quantum dots grown by the molecular-beam epitaxy. Efficient low-temperature photoluminescence near 990 nm with a full width at half maximum of about 60 meV has been demonstrated for metal-organic vapour-phase epitaxy structure. The obtained results can be used for the formation of compact vertical micro cavity optically pumped laser arrays required for neuromorphic computation.

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不同外延技术制备InGaAs/GaAs量子点的比较分析

本文报道了金属-有机气相外延和stranski - krstanow分子束外延生长的In0.63Ga0.37As/GaAs量子点的形成和微光发光研究结果。与分子束外延生长的单层量子点结构相比，金属有机气相外延生长的单层量子点结构表现出更高的峰/积分光致发光强度，以及更小的光致发光光谱半宽度。金属-有机气相外延结构在990 nm附近实现了高效的低温光致发光，最大半宽约为60 meV。所得结果可用于神经形态计算所需的紧凑垂直微腔光泵浦激光阵列的形成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2022 International Conference on Electrical Engineering and Photonics (EExPolytech)

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