Modularized low temperature LNO/PZT/LNO ferroelectric capacitor-over-interconnect (COI) FeRAM for advanced SOC (ASOC) application

Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285) Pub Date : 2002-08-07 DOI:10.1109/CICC.2002.1012882

S. Lung, D. Lin, S. S. Chen, G. Weng, C. L. Liu, S. Lai, C. Tsai, T. B. Wu, Ru-Gun Liu

引用次数: 1

Abstract

Embedded FeRAM module is achieved by a low temperature capacitor-over-interconnect (COI) process. A conductive perovskite LaNiO/sub 3/ (LNO) bottom electrode is used as seed layer, the crystallization temperature of in-situ sputter deposited PZT is greatly reduced from 600/spl deg/C to 350 /spl deg/C/spl sim/400/spl deg/C LNO's near-perfect lattice match with PZT allows PZT to growth epitaxially at low temperature. When LNO is used as top electrode of the ferroelectric capacitor, the fatigue performance is greatly improved. The COI LNO/PZT/LNO FeRAM structure achieved by this low temperature process is completely modular and is ideal for advanced Cu/low-K SOC application.

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模块化低温LNO/PZT/LNO铁电电容互连(COI) FeRAM用于高级SOC (ASOC)应用

嵌入式FeRAM模块是通过低温电容互连(COI)工艺实现的。采用导电钙钛矿LaNiO/sub 3/ (LNO)底电极作为种子层，原位溅射沉积PZT的结晶温度从600/spl°C大幅降低到350 /spl°C/spl sim/400/spl°C, LNO与PZT近乎完美的晶格匹配使得PZT可以在低温下外延生长。采用LNO作为铁电电容器的顶电极，大大提高了铁电电容器的疲劳性能。通过这种低温工艺实现的COI LNO/PZT/LNO FeRAM结构是完全模块化的，是先进Cu/低k SOC应用的理想选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)

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